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 CM400DU-12NFH
Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
High Frequency Dual IGBTMODTM
400 Amperes/600 Volts
A D T - (4 TYP.) H
G2
F
BE
C L CM
C2E1 E2 C1
E2 E1 G1
J H
U
S - NUTS (3 TYP)
Q
Q
P
N
G
K
K
K
R M
C
L
Description: Powerex IGBTMODTM Modules are designed for use in switching applications. Each module consists of two IGBT Transistors in a halfbridge configuration with each transistor having a reverse-connected super-fast recovery free-wheel diode. All components and interconnects are isolated from the heat sinking base plate, offering simplified system assembly and thermal management.
G2 E2
C2E1 E2 C1 E1 G1
Features: Low Drive Power Low VCE(sat) High Frequency Switching (50kHz to 60kHz) Isolated Base Plate for Easy Heat Sinking Applications: AC Motor Control Motion/Servo Control UPS Welding Power Supplies Laser Power Supplies Ordering Information: Example: Select the complete module number you desire from the table - i.e. CM400DU-12NFH is a 600V (VCES), 400 Ampere High Power Dual Module.
Type CM Current Rating Amperes 400 VCES Volts (x 50) 12
Outline Drawing and Circuit Diagram Dimensions A B C D E F G H J K Inches 4.25 2.44 Millimeters 108.0 62.0 Dimensions L M N P Q R S T U Inches 0.87 0.33 0.10 0.85 0.98 0.11 M6 M6.5 0.02 Millimeters 22.0 8.5 2.5 21.5 25.0 2.8 M6 M6.5 0.5
1.14 +0.04/-0.02 29.0 +1.0/-0.5 3.660.01 1.880.01 0.67 0.16 0.24 0.59 0.55 93.00.25 48.00.25 17.0 4.0 6.0 15.0 14.0
1
Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 CM400DU-12NFH High Frequency Dual IGBTMODTM 400 Amperes/600 Volts
Absolute Maximum Ratings, Tj = 25 C unless otherwise specified
Ratings Junction Temperature Storage Temperature Collector-Emitter Voltage (G-E SHORT) Gate-Emitter Voltage (C-E SHORT) Collector Current (Tc = 25C) Peak Collector Current Emitter Current** (Tc = 25C) Peak Emitter Current** Maximum Collector Dissipation (Tj < 150C) Maximum Collector Dissipation (Tj < 150C) Mounting Torque, M6 Main Terminal Mounting Torque, M6 Mounting Weight Isolation Voltage (Main Terminal to Baseplate, AC 1 min.) Symbol Tj Tstg VCES VGES IC ICM IE IEM Pc Pc' - - - Viso CM400DU-12NFH -40 to 150 -40 to 125 600 20 400 800* 400 800* 960 1640 40 40 400 2500 Units C C Volts Volts Amperes Amperes Amperes Amperes Watts Watts in-lb in-lb Grams Volts
* Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed Tj(max) rating. **Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
Static Electrical Characteristics, Tj = 25 C unless otherwise specified
Characteristics Collector-Cutoff Current Gate Leakage Current Gate-Emitter Threshold Voltage Collector-Emitter Saturation Voltage Symbol ICES IGES VGE(th) VCE(sat) QG VEC Test Conditions VCE = VCES, VGE = 0V VGE = VGES, VCE = 0V IC = 40mA, VCE = 10V IC = 400A, VGE = 15V, Tj = 25C IC = 400A, VGE = 15V, Tj = 125C Total Gate Charge Emitter-Collector Voltage* VCC = 300V, IC = 400A, VGE = 15V IE = 400A, VGE = 0V Min. - - 5 - - - - Typ. - - 6 2.0 1.95 2480 - Max. 1 0.5 7 2.7 - - 2.6 Units mA A Volts Volts Volts nC Volts
* Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
Dynamic Electrical Characteristics, Tj = 25 C unless otherwise specified
Characteristics Input Capacitance Output Capacitance Reverse Transfer Capacitance Resistive Load Switch Times Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Symbol Cies Coes Cres td(on) tr td(off) tf trr Qrr VCC = 300V, IC = 400A, VGE1 = VGE2 = 15V, RG = 3.1 , Inductive Load Switching Operation IE = 400A VCE = 10V, VGE = 0V Test Conditions Min. - - - - - - - - - Typ. - - - - - - - - 7.7 Max. 110 7.2 4.0 400 200 700 150 200 - Units nF nF nF ns ns ns ns ns C
Diode Reverse Recovery Time* Diode Reverse Recovery Charge*
* Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
2
Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 CM400DU-12NFH High Frequency Dual IGBTMODTM 400 Amperes/600 Volts
Thermal and Mechanical Characteristics, Tj = 25 C unless otherwise specified
Characteristics External Gate Resistance Thermal Resistance, Junction to Case Thermal Resistance, Junction to Case Symbol RG Rth(j-c)Q Rth(j-c')Q Rth(j-c)D Rth(c-f) Per IGBT 1/2 Module TC measured Point is just Under the Chips Thermal Resistance, Junction to Case Contact Thermal Resistance Per FWDi 1/2 Module Per Module, Thermal Grease Applied - - - 0.04 0.18 - C/W C/W Test Conditions Min. 1.6 - -- Typ. -- - -- Max. 16 0.13 Units C/W
0.076* C/W
* If you use this value, Rth(f-a) should be measured just under the chips.
OUTPUT CHARACTERISTICS (TYPICAL)
COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL)
COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL)
800
COLLECTOR CURRENT, IC, (AMPERES)
700 600 500 400 300 200 100 0 0
9 8.5
2.5 2.0 1.5 1.0 0.5 0
COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS)
COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS)
VGE = 20V 15 13
11
10 9.5
3.0
VGE = 15V Tj = 25C Tj = 125C
5
Tj = 25C
4 3 2 1
8
IC = 800A IC = 400A IC = 160A
7.5
7
Tj = 25oC
0 0 200 400 600 800 6 8 10 12 14 16 18 20
COLLECTOR-CURRENT, IC, (AMPERES) GATE-EMITTER VOLTAGE, VGE, (VOLTS)
1
2
3
4
5
COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS)
FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL)
CAPACITANCE VS. VCE (TYPICAL)
SWITCHING LOSS, ESW( on), ESW( off), (mJ/PULSE)
SWITCHING LOSS CHARACTERISTICS (TYPICAL)
103
Tj = 25C
CAPACITANCE, Cies, Coes, Cres, (nF)
EMITTER CURRENT, IE, (AMPERES)
103
VGE = 0V
102
102
Cies
101
VEC = 300V VGE = 15V RG = 3.1 Tj = 125C ESW(on) ESW(off)
102
101
Coes
100
101 0 0.5 1.0 1.5 2.0 2.5 3.0
EMITTER-COLLECTOR VOLTAGE, VEC, (VOLTS)
100 10-1
Cres
100
101
102
10-1 101
102
COLLECTOR-CURRENT, IC, (AMPERES)
103
COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS)
3
Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 CM400DU-12NFH High Frequency Dual IGBTMODTM 400 Amperes/600 Volts
HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL)
REVERSE RECOVERY CHARACTERISTICS (TYPICAL)
REVERSE RECOVERY CURRENT, Irr, (AMPERES)
GATE CHARGE CHARACTERISTICS (TYPICAL)
103
td(off) td(on)
SWITCHING TIME, (ns) REVERSE RECOVERY TIME, trr, (ns)
103
103
20
GATE-EMITTER VOLTAGE, VGE, (VOLTS)
IC = 400A
16 12 8 4
VCC = 200V VCC = 300V
102
tf
102
Irr trr
102
tr
VCC = 300V VGE = 15V RG = 3.1 Tj = 125C
VCC = 300V VGE = 15V RG = 3.1 Tj = 125C
101 101
102
COLLECTOR CURRENT, IC, (AMPERES)
103
101 101
102
EMITTER CURRENT, IE, (AMPERES)
101 103
0 0
500 1000 1500 2000 2500 3000 3500
GATE CHARGE, QG, (nC)
NORMALIZED TRANSIENT THERMAL IMPEDANCE, Zth(j-c') Zth = Rth * (NORMALIZED VALUE)
100
10-3
10-2
10-1
100
101
NORMALIZED TRANSIENT THERMAL IMPEDANCE, Zth(j-c') Zth = Rth * (NORMALIZED VALUE)
TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (IGBT)
TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (FWDi)
100
10-3
10-2
10-1
100
101
10-1
10-1
10-1
10-1
10-2
10-2
Single Pulse TC = 25C Per Unit Base = Rth(j-c) = 0.13C/W
10-2
10-2
Single Pulse TC = 25C Per Unit Base = Rth(j-c) = 0.18C/W
10-3 10-5
TIME, (s)
10-4
10-3 10-3
10-3 10-5
TIME, (s)
10-4
10-3 10-3
4


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